Analysis of Trapping and Detrapping in Semi-Insulating GaAs Detectors

摘要

To investigate the trapping and detrapping in SI-GaAs particle detectors we analyzed the signals caused by 5.48 MeV alpha particles with a charge sensitive preamplifier. From the bias and temperature dependence of these signals we determine the activation energies of two electron traps. Additional simulation and measurements of the lifetime as a function of resistivity have shown that the EL2+ is the dominant electron trap in semi-insulating GaAs.